R6509KNXC7G

厂牌:ROHM
包装:--
类目:--
编号:B000044471600
描述:MOSFET SINGLE 9A 650V 48W
最新价格近期成交20单+
数量价格(含税)
1¥18.1513
100¥12.5157
500¥11.3445
1000¥9.4416
2000¥8.7098
5000¥7.5386
10000¥7.0995
库存:1,000交期:5-10个工作日起订:1增量:1
数量:
X
18.1513(单价)
合计:
¥18.15
商品满500包邮
商品参数
参数项参数值
参数项参数值
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Rds On (Max) @ Id, Vgs585mOhm @ 2.8A, 10V
FET Feature-
Power Dissipation (Max)48W (Tc)
Vgs(th) (Max) @ Id5V @ 230µA
Supplier Device PackageTO-220FM
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds540 pF @ 25 V
Qualification-
Moisture Sensitivity Level1 (Unlimited)