参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min2.5 s
KRHTS8541299000
TechnologySiC
Vgs th - Gate-Source Threshold Voltage2.7 V
Transistor PolarityN-Channel
Id - Continuous Drain Current17 A
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Vgs - Gate-Source Voltage- 4 V, + 22 V
ImageROHM Semiconductor SCT3160KLGC11
Typical Turn-On Delay Time14 ns
DescriptionMOSFET N-Ch 1200V SiC 17A 160mOhm TrenchMOS
Rds On - Drain-Source Resistance160 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time24 ns
Package / CaseTO-247-3
PackagingTube
Maximum Operating Temperature+ 175 C
Product CategoryMOSFET
Factory Pack Quantity450
Mounting StyleThrough Hole
BrandROHM Semiconductor
Product TypeMOSFET
RoHS Details
TARIC8541290000
MXHTS85412999
Qg - Gate Charge42 nC
ManufacturerROHM Semiconductor
SeriesSCT3x
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.211644 oz
Fall Time25 ns
CNHTS8541290000
Part # AliasesSCT3160KL
Pd - Power Dissipation103 W
Vds - Drain-Source Breakdown Voltage1200 V
Number of Channels1 Channel
Rise Time18 ns