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RQ3E120ATTB
厂牌：ROHM
包装：REEL 3000
类目：元器件 > 分立器件 > MOSFET
编号：B000044471619
描述：RQ3E120AT Series -30 V -39 A 8 mOhm Surface Mount Power Mosfet - HSMT-8
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current12 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance61 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time140 ns
Width2.4 mm
Height0.85 mm
Length3 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge62 nC
Package / CaseHSMT-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time95 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RQ3E120ATTB
Unit Weight0.008517 oz
Factory Pack Quantity3000
BrandROHM Semiconductor
Pd - Power Dissipation2 W
Product TypeMOSFET
Part # AliasesRQ3E120AT
Product CategoryMOSFET
ManufacturerROHM Semiconductor
SubcategoryMOSFETs
DescriptionMOSFET -30V P-CHANNEL -12A
Vds - Drain-Source Breakdown Voltage39 V
USHTS8541290095
Number of Channels1 Channel
Rise Time30 ns
Moisture Sensitivity Level1 (Unlimited)