参数项参数值
参数项参数值
Forward Transconductance - Min4.4 S, 5.5 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V, 2.5 V
TechnologySi
Id - Continuous Drain Current9 A, 8 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance12.3 mOhms, 22 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time33 ns, 55 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge15.5 nC, 19.6 nC
Package / CaseTSMT-8
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor QH8MA4TCR
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity3000
Fall Time7 ns, 22 ns
SubcategoryMOSFETs
BrandROHM Semiconductor
Product CategoryMOSFET
Unit Weight0.004553 oz
DescriptionMOSFET Zener Diode, 100mW, 2 Pin.
ManufacturerROHM Semiconductor
Product TypeMOSFET
USHTS8541290095
Part # AliasesQH8MA4
Pd - Power Dissipation2.6 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time19 ns, 16 ns
Moisture Sensitivity Level1 (Unlimited)