参数项参数值
参数项参数值
Forward Transconductance - Min2.9 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current11 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance340 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Qg - Gate Charge22 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time20 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
SeriesSuper Junction-MOS KN
RoHS Details
ImageROHM Semiconductor R6011KNJTL
Product CategoryMOSFET
Unit Weight0.077603 oz
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation124 W
Part # AliasesR6011KNJ
DescriptionMOSFET Nch 600V 11A Si MOSFET
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time25 ns