参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time5 ns
Width1.7 mm
Rds On - Drain-Source Resistance180 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time20 ns
MXHTS85412999
Length2 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge1.8 nC
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
CNHTS8541210000
ImageROHM Semiconductor RUF015N02TL
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Fall Time3 ns
Factory Pack Quantity3000
SeriesRUF015N02
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
Unit Weight0.000282 oz
DescriptionMOSFET Med Pwr, Sw MOSFET P Chan, 20V, 1.5A
ManufacturerROHM Semiconductor
Product TypeMOSFET
USHTS8541290095
Part # AliasesRUF015N02
Pd - Power Dissipation0.8 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time5 ns
Moisture Sensitivity Level1 (Unlimited)