SCT3030ALHRC11

厂牌：ROHM

包装：TUBE 450

类目：元器件 > 分立器件 > MOSFET

编号：B000044471663

描述：MOSFET N-CH 650V 70A 175DEG C 262W; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V; Power Dissipation Pd:262W; Transistor Case Style:TO-247N; No. of Pins:3Pins; Operating Temperature Max:175蚓; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

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商品参数

参数项参数值

ImageROHM Semiconductor SCT3030ALHRC11

ConfigurationSingle

DescriptionMOSFET 650V 70A 262W SIC 30mOhm TO-247N

Forward Transconductance - Min9.4 S

Vgs th - Gate-Source Threshold Voltage2.7 V

TechnologySiC

Transistor PolarityN-Channel

Id - Continuous Drain Current70 A

Vgs - Gate-Source Voltage- 4 V, + 22 V

QualificationAEC-Q101

Minimum Operating Temperature- 55 C

Typical Turn-On Delay Time22 ns

Rds On - Drain-Source Resistance30 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time48 ns

PackagingTube

Package / CaseTO-247-3

Product CategoryMOSFET

Factory Pack Quantity30

Maximum Operating Temperature+ 175 C

Mounting StyleThrough Hole

Product TypeMOSFET

BrandROHM Semiconductor

RoHS Details

ManufacturerROHM Semiconductor

Qg - Gate Charge104 nC

TARIC8541290000

SeriesSCT3x

SubcategoryMOSFETs

Channel ModeEnhancement

USHTS8541290095

Fall Time27 ns

Unit Weight0.454064 oz

CNHTS8541290000

Pd - Power Dissipation262 W

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time41 ns

Moisture Sensitivity Level1 (Unlimited)