QH8JA1TCR

厂牌：ROHM

包装：REEL 3000

类目：元器件 > 分立器件 > MOSFET

编号：B000044471678

描述：MOSFET DUAL P-CH -20V -5A 1.1W; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.2V; Power Dissipation Pd:1.1W; Transistor Case Style:TSMT; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

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商品参数

参数项参数值

Forward Transconductance - Min5.5 S, 5.5 S

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Id - Continuous Drain Current5 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 10 V, + 10 V

Typical Turn-On Delay Time11 ns, 11 ns

Rds On - Drain-Source Resistance28 mOhms, 28 mOhms

Transistor Type2 P-Channel

Typical Turn-Off Delay Time70 ns, 70 ns

MXHTS85412999

KRHTS8541299000

Mounting StyleSMD/SMT

Package / CaseTSMT-8

Qg - Gate Charge10.2 nC

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

TARIC8541290000

PackagingMouseReel

PackagingReel

PackagingCut Tape

ImageROHM Semiconductor QH8JA1TCR

RoHS Details

Channel ModeEnhancement

SubcategoryMOSFETs

Fall Time65 ns, 65 ns

BrandROHM Semiconductor

ManufacturerROHM Semiconductor

Product CategoryMOSFET

Factory Pack Quantity3000

USHTS8541290095

Product TypeMOSFET

DescriptionMOSFET 20V Pch+Pch Si MOSFET

Pd - Power Dissipation1.5 W

Part # AliasesQH8JA1

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels2 Channel

Rise Time32 ns, 32 ns