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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min1.4 S, 1.4 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7.2 ns, 7.2 ns
Rds On - Drain-Source Resistance25 mOhms, 25 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time12 ns, 12 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge8.4 nC
Package / CaseTSMT-8
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor QH8KA2TCR
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity3000
Fall Time5.7 ns, 5.7 ns
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
Unit Weight1.624366 oz
ManufacturerROHM Semiconductor
DescriptionMOSFET 30V Nch+Nch Si MOSFET
Product TypeMOSFET
USHTS8541290095
Part # AliasesQH8KA2
Pd - Power Dissipation1.5 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time8 ns, 8 ns