SCT3120ALHRC11

厂牌：ROHM

包装：TUBE 450

类目：元器件 > 分立器件 > MOSFET

编号：B000044471766

描述：MOSFET N-CH 650V 21A 175DEG C 103W; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V; Power Dissipation Pd:103W; Transistor Case Style:TO-247N; No. of Pins:3Pins; Operating Temperature Max:175蚓; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

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商品参数

参数项参数值

ConfigurationSingle

Forward Transconductance - Min2.7 S

Vgs th - Gate-Source Threshold Voltage2.7 V

TechnologySiC

Transistor PolarityN-Channel

Id - Continuous Drain Current21 A

ImageROHM Semiconductor SCT3120ALHRC11

Vgs - Gate-Source Voltage- 4 V, + 22 V

Minimum Operating Temperature- 55 C

DescriptionMOSFET 650V 21A 103W SIC 120mOhm TO-247N

QualificationAEC-Q101

Typical Turn-On Delay Time14 ns

Rds On - Drain-Source Resistance120 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time23 ns

PackagingTube

Package / CaseTO-247-3

Maximum Operating Temperature+ 175 C

Product CategoryMOSFET

Factory Pack Quantity30

Mounting StyleThrough Hole

Product TypeMOSFET

BrandROHM Semiconductor

ManufacturerROHM Semiconductor

TARIC8541290000

Qg - Gate Charge38 nC

RoHS Details

SeriesSCT3x

SubcategoryMOSFETs

Channel ModeEnhancement

USHTS8541290095

Fall Time14 ns

Unit Weight0.434895 oz

CNHTS8541290000

Pd - Power Dissipation103 W

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time21 ns