参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance38 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time40 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge10 nC
Mounting StyleSMD/SMT
Package / CaseSOT-346-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor RQ5E035ATTCL
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Fall Time20 ns
Factory Pack Quantity3000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
Unit Weight0.000423 oz
DescriptionMOSFET Pch -30V -3.5A Power MOSFET
ManufacturerROHM Semiconductor
Product TypeMOSFET
USHTS8541290095
Part # AliasesRQ5E035AT
Pd - Power Dissipation1 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time12 ns
Moisture Sensitivity Level1 (Unlimited)