参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current1.3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time8 ns
Width1.7 mm
Height0.85 mm
Rds On - Drain-Source Resistance260 mOhms
Transistor Type1 P-Channel MOSFET
Typical Turn-Off Delay Time30 ns
MXHTS85412999
Length2 mm
KRHTS8541299000
Qg - Gate Charge2.4 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingReel
ImageROHM Semiconductor RZF013P01TL
RoHS Details
Channel ModeEnhancement
SeriesRZF013P01
SubcategoryMOSFETs
Fall Time9 ns
BrandROHM Semiconductor
Factory Pack Quantity3000
Unit Weight0.000988 oz
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerROHM Semiconductor
DescriptionMOSFET 1.5V Drive Pch MOSFET
USHTS8541290095
Pd - Power Dissipation0.8 W
Part # AliasesRZF013P01
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time10 ns