参数项参数值
参数项参数值
DC Current Gain hFE Max270 at 200 mA, 2 V
Gain Bandwidth Product fT400 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max12 V
Continuous Collector Current1.5 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width1.6 mm
Height0.85 mm
DC Collector/Base Gain hfe Min270 at 200 mA, 2 V
MXHTS85412999
Length2.9 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor QSX7TR
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Factory Pack Quantity3000
SeriesQSX7
SubcategoryTransistors
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT TRANS GP BJT NPN 12V 1.5A 6PIN
ManufacturerROHM Semiconductor
USHTS8541290095
Part # AliasesQSX7
Pd - Power Dissipation1.25 W