参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current9 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance535 mOhms
Transistor Type1 N-Channel
Qg - Gate Charge23 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time30 ns
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6009END3TL1
Product CategoryMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation94 W
USHTS8541290095
DescriptionMOSFET 600V N-CH 9A POWER
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time35 ns