参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min4.9 S
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySiC
Transistor PolarityN-Channel
Id - Continuous Drain Current39 A
ImageROHM Semiconductor SCT3060ALHRC11
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 4 V, + 22 V
QualificationAEC-Q101
DescriptionMOSFET 650V 39A 165W SIC 60mOhm TO-247N
Typical Turn-On Delay Time19 ns
Rds On - Drain-Source Resistance60 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
PackagingTube
Package / CaseTO-247-3
Maximum Operating Temperature+ 175 C
Product CategoryMOSFET
Factory Pack Quantity30
Mounting StyleThrough Hole
Product TypeMOSFET
BrandROHM Semiconductor
SeriesSCT3x
ManufacturerROHM Semiconductor
TARIC8541290000
Qg - Gate Charge58 nC
RoHS Details
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time21 ns
Pd - Power Dissipation165 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time37 ns