SCT3060ALHRC11

厂牌:ROHM
包装:TUBE 450
类目:元器件 > 分立器件 > MOSFET
编号:B000044471959
描述:N-channel SiC(碳化硅)功率MOSFET
最新价格近期成交11单+
数量价格(含税)
1¥196.9559
100¥141.1116
450¥117.6173
900¥108.7614
2250¥94.0500
4500¥88.1948
库存:420交期:5-10个工作日起订:1增量:1
数量:
X
196.9559(单价)
合计:
¥196.96
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min4.9 S
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySiC
Transistor PolarityN-Channel
Id - Continuous Drain Current39 A
ImageROHM Semiconductor SCT3060ALHRC11
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 4 V, + 22 V
QualificationAEC-Q101
DescriptionMOSFET 650V 39A 165W SIC 60mOhm TO-247N
Typical Turn-On Delay Time19 ns
Rds On - Drain-Source Resistance60 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
PackagingTube
Package / CaseTO-247-3
Maximum Operating Temperature+ 175 C
Product CategoryMOSFET
Factory Pack Quantity30
Mounting StyleThrough Hole
Product TypeMOSFET
BrandROHM Semiconductor
SeriesSCT3x
ManufacturerROHM Semiconductor
TARIC8541290000
Qg - Gate Charge58 nC
RoHS Details
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time21 ns
Pd - Power Dissipation165 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time37 ns