参数项参数值
参数项参数值
Forward Transconductance - Min1 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance520 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22 ns
Qg - Gate Charge3.5 nC
Package / CaseSC-96-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time15 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RSR010N10HZGTL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
USHTS8541290095
DescriptionMOSFET 100V N-CHANNEL 1A
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time9 ns