参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs3.6mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)59W (Tc)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package8-HSMT (3.2x3)
Part StatusActive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1580 pF @ 20 V
Moisture Sensitivity Level3 (168 Hours)