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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min5 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current17.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance105 mOhms
Transistor Type1 N-Channel
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Qg - Gate Charge24 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RD3P175SNFRATL
PackagingCut Tape
PackagingReel
PackagingMouseReel
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time50 ns
ManufacturerROHM Semiconductor
Unit Weight0.025230 oz
Product CategoryMOSFET
Factory Pack Quantity2500
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET Nch 100V Vdss 17.5A TO-252(DPAK); TO-252
Pd - Power Dissipation20 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time25 ns
Moisture Sensitivity Level1 (Unlimited)