参数项参数值
参数项参数值
Forward Transconductance - Min2 s
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance75 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time65 ns
MXHTS85412999
KRHTS8541219000
CNHTS8541290000
Qg - Gate Charge6.5 nC
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time35 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
SeriesRZF020P01
RoHS Details
ImageROHM Semiconductor RZF020P01TL
Product CategoryMOSFET
Unit Weight0.002469 oz
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation800 mW
Part # AliasesRZF020P01
USHTS8541210095
DescriptionMOSFET 1.5V DRVE PCH MOSFET
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time17 ns
Moisture Sensitivity Level1 (Unlimited)