参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current250 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4 ns
Rds On - Drain-Source Resistance900 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time20 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge-
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-323-3
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor RU1E002SPTCL
Channel ModeEnhancement
SeriesRU1E002SP
Fall Time23 ns
SubcategoryMOSFETs
BrandROHM Semiconductor
Factory Pack Quantity3000
Unit Weight0.001311 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET 4V Drive Pch MOSFET Drive Pch
ManufacturerROHM Semiconductor
USHTS8541290095
Pd - Power Dissipation200 mW
Part # AliasesRU1E002SP
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time6 ns