参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current24 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time21 ns
Rds On - Drain-Source Resistance11.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time54 ns
Mounting StyleSMD/SMT
Package / CaseHSMT-8
Qg - Gate Charge13.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RQ3E110AJTB
PackagingCut Tape
PackagingReel
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time20 ns
ManufacturerROHM Semiconductor
Product CategoryMOSFET
Factory Pack Quantity3000
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET 30V N-CHANNEL 24A
Part # AliasesRQ3E110AJ
Pd - Power Dissipation15 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time21 ns