参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance210 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
MXHTS85411001
CNHTS8541210000
Qg - Gate Charge2 nC
Package / CaseTUMT-3
Mounting StyleSMD/SMT
JPHTS8541100901
Maximum Operating Temperature+ 150 C
CAHTS8541100090
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RSF015N06FRATL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation800 mW
Part # AliasesRSF015N06FRA
USHTS8541100080
DescriptionMOSFET Nch 60V Vds 1.5A 0.255Rds(on) 2Qg
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time9 ns
Moisture Sensitivity Level1 (Unlimited)