参数项参数值
参数项参数值
Differential Efficiency0.95 W/A
Characteristic Temperature-
If - Forward Current255 mA
Series Resistance-
Wavelength820 nm
Minimum Operating Temperature- 10 C
Maximum Operating Temperature+ 60 C
CNHTS8541401001
Vr - Reverse Voltage2 V
RoHS Details
Output Power220 mW
PackagingTray
ImageROHM Semiconductor RLD82NZJ1-00A
SubcategoryLasers
BrandROHM Semiconductor
Fall Time-
ManufacturerROHM Semiconductor
Factory Pack Quantity500
Product CategoryLaser Diodes
USHTS8541402000
Product TypeLaser Diodes
DescriptionLaser Diodes 820NM SNGL MODE LASER INVI
Vf - Forward Voltage2.4 V
Rise Time-