参数项参数值
参数项参数值
Vgs th - Gate-Source Threshold Voltage5.5 V
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance1.3 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18 ns
Qg - Gate Charge8.5 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
Minimum Operating Temperature- 55 C
Factory Pack Quantity2500
BrandROHM Semiconductor
SeriesRD3
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET 190V N-CH 10A POWER MOSFET
ManufacturerROHM Semiconductor
TARIC8541290000
ImageROHM Semiconductor RD3U041AAFRATL
Product CategoryMOSFET
Fall Time15 ns
RoHS Details
SubcategoryMOSFETs
Pd - Power Dissipation29 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel
Rise Time14 ns