RS1E240BNTB

厂牌:ROHM
包装:REEL 2500
类目:元器件 > 分立器件 > MOSFET
编号:B000044472234
描述:ROHM - RS1E240BNTB - 功率场效应管, MOSFET, N通道, 30 V, 40 A, 3200 µohm, HSOP, 表面安装 库存分布:; packSize: 1; minimumOrderQty: 100; rohs: YES
最新价格近期成交5单+
数量价格(含税)
1¥14.2722
100¥8.4170
500¥7.5386
1000¥6.8067
2500¥5.7089
5000¥5.2696
12500¥4.5379
库存:2,600交期:5-10个工作日起订:10增量:1
数量:
X
14.2722(单价)
合计:
¥142.72
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current24 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance2.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time115 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge70 nC
Mounting StyleSMD/SMT
Package / CaseHSOP-8
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity2500
BrandROHM Semiconductor
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor
TARIC8541290000
ImageROHM Semiconductor RS1E240BNTB
Product CategoryMOSFET
Fall Time26 ns
RoHS Details
SubcategoryMOSFETs
Part # AliasesRS1E240BN
Pd - Power Dissipation30 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time70 ns