参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current100 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time80 ns
Rds On - Drain-Source Resistance3.8 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time600 ns
Qg - Gate Charge-
Package / CaseDFN-0604-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time250 ns
PackagingReel
PackagingCut Tape
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RV3CA01ZPT2CL
Product CategoryMOSFET
Unit Weight0.000670 oz
Factory Pack Quantity8000
SubcategoryMOSFETs
Product TypeMOSFET
ManufacturerROHM Semiconductor
Pd - Power Dissipation100 mW
Part # AliasesRV3CA01ZP
USHTS8541210095
DescriptionMOSFET -20V P-CHANNEL -110MA
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time85 ns