R6076KNZ4C13

厂牌:ROHM
包装:TUBE 600
类目:元器件 > 分立器件 > MOSFET
编号:B000044472304
描述:MOSFET N-CH 600V 76A 150DEG C 735W; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:735W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
最新价格近期成交13单+
数量价格(含税)
1¥177.3411
100¥122.0088
500¥110.5178
600¥92.0739
1200¥85.1939
3000¥73.7030
6000¥69.0919
库存:600交期:5-10个工作日起订:30增量:1
数量:
X
177.3411(单价)
合计:
¥5320.23
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current76 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Transistor Type1 N-Channel
Typical Turn-Off Delay Time230 ns
Qg - Gate Charge165 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time150 ns
TARIC8541290000
PackagingTube
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6076KNZ4C13
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity30
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation735 W
USHTS8541290095
DescriptionMOSFET 600V N-CH 76A POWER MOSFET
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time250 ns