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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min1.9 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance570 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge14.5 nC
Package / CaseTO-263-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor R6007KNJTL
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time25 ns
ManufacturerROHM Semiconductor
Factory Pack Quantity1000
SeriesSuper Junction-MOS KN
Product CategoryMOSFET
Unit Weight0.077603 oz
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET Nch 600V 7A Si MOSFET
Part # AliasesR6007KNJ
Pd - Power Dissipation78 W
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time22 ns