参数项参数值
参数项参数值
Forward Transconductance - Min400 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Id - Continuous Drain Current300 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance1.1 Ohms
Typical Turn-Off Delay Time9 ns
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time32 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RJU003N03FRAT106
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation200 mW
Part # AliasesRJU003N03FRA
USHTS8541210095
DescriptionMOSFET 2.5V Drive N-Ch AEC-Q101
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time4 ns