参数项参数值
参数项参数值
Forward Transconductance - Min2.5 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2 V
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance75 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time50 ns
CNHTS8541290000
Qg - Gate Charge9.3 nC
Package / CaseSC-96-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time20 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RTR030P02HZGTL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
USHTS8541290095
DescriptionMOSFET -20V P-CHANNEL -3A
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time20 ns
Moisture Sensitivity Level1 (Unlimited)