RS1G120MNTB

厂牌：ROHM

包装：REEL 2500

类目：元器件 > 分立器件 > MOSFET

编号：B000044472345

描述：MOSFET N-CH 40V 40A HSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0116ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:25W; Transistor Case Style:HSOP; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Forward Transconductance - Min4 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current12 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time9.7 ns

Width5 mm

Rds On - Drain-Source Resistance20.7 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time23.8 ns

Height1.1 mm

Length5.8 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleSMD/SMT

Qg - Gate Charge9.4 nC

Package / CaseHSOP-8

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

ProductMOSFET

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

RoHS Details

ImageROHM Semiconductor RS1G120MNTB

Channel ModeEnhancement

SubcategoryMOSFETs

Fall Time3.2 ns

BrandROHM Semiconductor

ManufacturerROHM Semiconductor

Factory Pack Quantity2500

Product CategoryMOSFET

Unit Weight0.002490 oz

Product TypeMOSFET

USHTS8541290095

DescriptionMOSFET 4.5V Drive Nch MOSFET

Pd - Power Dissipation25 W

Part # AliasesRS1G120MN

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time4.3 ns

TypePower MOSFET

Moisture Sensitivity Level1 (Unlimited)