参数项参数值
参数项参数值
Forward Transconductance - Min1.8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Width1.8 mm
Height0.95 mm
Rds On - Drain-Source Resistance360 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time40 ns
MXHTS85412999
Length3 mm
KRHTS8541299000
Qg - Gate Charge10 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
ProductMOSFET
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor RQ5L015SPTL
RoHS Details
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time10 ns
BrandROHM Semiconductor
Factory Pack Quantity3000
Unit Weight0.001239 oz
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerROHM Semiconductor
DescriptionMOSFET Pch -60V -1.5A Middle Power MOSFET
USHTS8541290095
Pd - Power Dissipation1 W
Part # AliasesRQ5L015SP
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time10 ns
TypePower MOSFET