参数项参数值
参数项参数值
Forward Transconductance - Min3.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2 V
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance65 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time55 ns
Qg - Gate Charge10.5 nC
Package / CaseSC-95-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time30 ns
TARIC8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RTQ035P02HZGTR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.25 W
USHTS8541290095
DescriptionMOSFET -20V P-CHANNEL -3.5A
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time40 ns
Moisture Sensitivity Level1 (Unlimited)