参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current30 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time37 ns
Rds On - Drain-Source Resistance143 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time70 ns
Qg - Gate Charge74 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time25 ns
PackagingTube
TARIC8541290000
SeriesBM14270MUV-LB
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6030JNZ4C13
Product CategoryMOSFET
Unit Weight0.454064 oz
Factory Pack Quantity30
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation370 W
USHTS8541290095
DescriptionMOSFET 600V N-CH 30A POWER
Vds - Drain-Source Breakdown Voltage600 V
TradenamePrestoMOS
Number of Channels1 Channel
Rise Time26 ns
Moisture Sensitivity Level1 (Unlimited)