参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current1.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6 ns
Width1.7 mm
Rds On - Drain-Source Resistance270 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time13 ns
Length2 mm
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Qg - Gate Charge2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor RSF014N03TL
RoHS Details
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time6 ns
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
SeriesRSF014N03
Product CategoryMOSFET
Factory Pack Quantity3000
Product TypeMOSFET
DescriptionMOSFET N-CH 30V 1.4A TUMT3
Pd - Power Dissipation800 mW
Part # AliasesRSF014N03
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time6 ns
TypeMOSFET