参数项参数值
参数项参数值
Forward Transconductance - Min4.9 S
ConfigurationSingle
TechnologySiC
Vgs th - Gate-Source Threshold Voltage2.7 V
Transistor PolarityN-Channel
Id - Continuous Drain Current39 A
Vgs - Gate-Source Voltage- 4 V, + 22 V
KRHTS8541299000
Typical Turn-On Delay Time19 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
RoHS Details
Rds On - Drain-Source Resistance60 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
Package / CaseTO-247-3
Factory Pack Quantity450
BrandROHM Semiconductor
ImageROHM Semiconductor SCT3060ALGC11
TARIC8541290000
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
PackagingTube
ManufacturerROHM Semiconductor
SubcategoryMOSFETs
Product CategoryMOSFET
Qg - Gate Charge58 nC
DescriptionMOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS
MXHTS85412999
Product TypeMOSFET
SeriesSCT3x
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.211644 oz
Fall Time21 ns
CNHTS8541290000
Part # AliasesSCT3060AL
Pd - Power Dissipation165 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time37 ns
Moisture Sensitivity Level1 (Unlimited)