参数项参数值
参数项参数值
Forward Transconductance - Min4.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.5 ns
Rds On - Drain-Source Resistance12.4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time28 ns
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge23 nC
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time23 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ5E070BNTCL
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRQ5E070BN
USHTS8541290095
DescriptionMOSFET Nch 30V 7Ad Si MOSFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time15 ns