参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance48 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
MXHTS85412999
CNHTS8541290000
Qg - Gate Charge3.7 nC
Package / CaseTUMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time11 ns
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RTF025N03FRATL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation800 mW
Part # AliasesRTF025N03FRA
USHTS8541290095
DescriptionMOSFET Nch 30V Vds 2.5A 0.07Rds(on) 3.7Qg
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time15 ns