参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance38 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time41 ns
Qg - Gate Charge6.8 nC
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time14 ns
TARIC8541290000
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ6E045SNTR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.25 W
Part # AliasesRQ6E045SN
USHTS8541290095
DescriptionMOSFET 30V N-CHANNEL 4.5A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time19 ns