参数项参数值
参数项参数值
PackagingTube
Package / Case7-PowerSIP Module
Mounting TypeThrough Hole
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 175°C
TechnologySilicon Carbide (SiC)
Power - Max361W (Tc)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C106A (Tc)
Input Capacitance (Ciss) (Max) @ Vds7230pF @ 800V
Rds On (Max) @ Id, Vgs15mOhm @ 68A, 18V
Gate Charge (Qg) (Max) @ Vgs260nC @ 18V
FET Feature-
Vgs(th) (Max) @ Id4.8V @ 36.4mA
Supplier Device PackageDOT-247
Grade-
Qualification-
Moisture Sensitivity LevelNot Applicable