参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance70 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Qg - Gate Charge2.9 nC
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time5 ns
TARIC8541290000
PackagingCut Tape
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ5E025SNTL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRQ5E025SN
USHTS8541210095
DescriptionMOSFET 30V N-CHANNEL 2.5A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time10 ns