参数项参数值
参数项参数值
Forward Transconductance - Min5 s
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time9 ns
Width1.7 mm
Rds On - Drain-Source Resistance28 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time210 ns
Length2 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge18 nC
Package / CaseSOT-323-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
ProductMOSFET Small Signal
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor RZF030P01TL
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time120 ns
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
SeriesRZF030P01
Factory Pack Quantity3000
Product CategoryMOSFET
Unit Weight0.116968 oz
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET Med Pwr, Sw MOSFET P Chan, -12V, 1.5A
Pd - Power Dissipation800 mW
Part # AliasesRZF030P01
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time40 ns
Moisture Sensitivity Level1 (Unlimited)