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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min0.8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time17 ns
Rds On - Drain-Source Resistance1.5 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Qg - Gate Charge8 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time40 ns
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6003KND3TL1
Product CategoryMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation44 W
USHTS8541290095
DescriptionMOSFET 600V Vdss; 3A Id 44W Pd; TO-252
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time17 ns