参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 1 A
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Width1.6 mm
Collector-Emitter Saturation Voltage- 150 mV
Height1.1 mm
DC Collector/Base Gain hfe Min270
MXHTS85412999
Length2.9 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseSMT-6
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor QST9TR
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
SeriesQST9
Factory Pack Quantity3000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT BIPOLAR PNP -30/-1A
ManufacturerROHM Semiconductor
USHTS8541290095
Part # AliasesQST9
Pd - Power Dissipation1.25 W