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RQ3E100GNTB
厂牌：ROHM
包装：REEL 3000
类目：元器件 > 分立器件 > MOSFET
编号：B000044473023
描述：Trans MOSFET N-CH 30V 10A 8-Pin HSMT EP T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8.4 ns
Rds On - Drain-Source Resistance11.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22.4 ns
MXHTS85412999
KRHTS8541299000
Package / CaseHSMT-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
Channel ModeEnhancement
Fall Time3.1 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RQ3E100GNTB
BrandROHM Semiconductor
Pd - Power Dissipation2 W
Factory Pack Quantity3000
Product TypeMOSFET
Part # AliasesRQ3E100GN
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 4.5V Drive Nch MOSFET
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Rise Time4.3 ns