参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
QualificationAEC-Q101
Typical Turn-On Delay Time4 ns
Rds On - Drain-Source Resistance1.6 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
MXHTS85423901
CNHTS8541210000
Qg - Gate Charge-
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CAHTS8542390000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time55 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RUC002N05HZGT116
Unit Weight0.001236 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation350 mW
Part # AliasesRUC002N05HZG
USHTS8542390001
DescriptionMOSFET Nch 50V Vds 0.2A 2.4Rds(on) SOT-23
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels1 Channel
Rise Time6 ns
Moisture Sensitivity Level1 (Unlimited)