QS8K11TCR

QS8K11TCR

厂牌：ROHM

包装：REEL 3000

类目：元器件 > 分立器件 > MOSFET

编号：B000044473069

描述：4V Drive Nch+Nch MOSFET

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min2.2 S, 2.2 S

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current3.5 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time10 ns, 10 ns

Rds On - Drain-Source Resistance35 mOhms, 35 mOhms

Transistor Type2 N-Channel

Typical Turn-Off Delay Time25 ns, 25 ns

Qg - Gate Charge7 nC, 7nC

Mounting StyleSMD/SMT

Package / CaseTSMT-8

Maximum Operating Temperature+ 150 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

ImageROHM Semiconductor QS8K11TCR

RoHS Details

Channel ModeEnhancement

Fall Time7 ns, 7 ns

SubcategoryMOSFETs

Factory Pack Quantity3000

Product CategoryMOSFET

BrandROHM Semiconductor

Product TypeMOSFET

DescriptionMOSFET 4V Drive Nch+Nch Si MOSFET

ManufacturerROHM Semiconductor

Pd - Power Dissipation1.5 W

Part # AliasesQS8K11

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels2 Channel

Rise Time25 ns, 25 ns

Moisture Sensitivity Level1 (Unlimited)