参数项参数值
参数项参数值
Forward Transconductance - Min4.8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
CNHTS8541210000
Qg - Gate Charge9.4 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
TARIC8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
BrandROHM Semiconductor
SeriesRD3L
RoHS Details
ImageROHM Semiconductor RD3L080SNFRATL
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity2500
Product TypeMOSFET
Pd - Power Dissipation15 W
USHTS8541290095
DescriptionMOSFET Nch 60V Vdss 8A ID TO-252(DPAK); TO-252
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time13 ns
Moisture Sensitivity Level1 (Unlimited)