参数项参数值
参数项参数值
Forward Transconductance - Min1.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance70 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
CNHTS8541290000
Qg - Gate Charge2.9 nC
Package / CaseSC-96-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time5 ns
TARIC8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RSR025N03HZGTL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
USHTS8541290095
DescriptionMOSFET 30V N-CHANNEL 2.5A
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time10 ns