参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance30 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time380 ns
Qg - Gate Charge30 nC
Package / CaseSOT-346T-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time210 ns
PackagingReel
PackagingCut Tape
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ5A040ZPTL
Product CategoryMOSFET
Unit Weight0.002523 oz
Factory Pack Quantity3000
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRQ5A040ZP
USHTS8541210095
DescriptionMOSFET -12V P-CHANNEL -4A
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time70 ns
Moisture Sensitivity Level1 (Unlimited)